Dynamic void formation in a DD-copper-structure with different metallization geometry
暂无分享,去创建一个
[1] Kirsten Weide-Zaage,et al. Simulation of time depending void formation in copper, aluminum and tungsten plugged via structures , 2003, Microelectron. Reliab..
[2] Y. S. Touloukian. Thermophysical properties of matter , 1970 .
[3] Kirsten Weide-Zaage,et al. Static and dynamic analysis of failure locations and void formation in interconnects due to various migration mechanisms , 2003 .
[4] S. Penka,et al. Electromigration failure mechanism studies on copper interconnects , 2002, Proceedings of the IEEE 2002 International Interconnect Technology Conference (Cat. No.02EX519).
[5] Carl V. Thompson,et al. The effects of microstructural transitions at width transitions on interconnect reliability , 2000 .
[6] Robert Rosenberg,et al. Mechanisms for very long electromigration lifetime in dual-damascene Cu interconnections , 2001 .
[7] Paul S. Ho,et al. Electromigration reliability issues in dual-damascene Cu interconnections , 2002, IEEE Trans. Reliab..