论文信息 - A 1-W, 800-MHz, switch-mode CMOS RF power amplifier using an on-chip transformer with double primary sides

A 1-W, 800-MHz, switch-mode CMOS RF power amplifier using an on-chip transformer with double primary sides

A fully-integrated switch-mode CMOS RF power amplifier is implemented in 0.18-µm process based on the concept of the distributed active transformer. In order to enhance the output power level by increasing the coupling factor of the transformer, the double primary parts are placed at both sides of the secondary part of the transformer, thereby reducing the effective resistance of the transmission-line. The designed power amplifier has more than 30-dBm of output power in GSM 850 band.

Songcheol Hong | Sunbo Shim

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