论文信息 - TiOx-modified NiO thin films for H2 gas sensors: effects of TiOx-overlayer sputtering parameters

TiOx-modified NiO thin films for H2 gas sensors: effects of TiOx-overlayer sputtering parameters

Abstract The sensitivity and selectivity of sputtered NiO thin films are found to be promoted by the addition of TiOx-overlayers. The sensing properties are strongly influenced by the sputtering parameters of the TiOx-overlayers. Among all studied films, the modified NiO thin films using TiOx-overlayers deposited in pure Ar gas with a sputtering power density of 1.59 W/cm2 have the best properties for H2 detection. The cross-sensitivity to other gases such as NO2 and NH3 is comparatively small. The response and recovery times of the sensor depend on operating temperature and gas concentrations. The sensor electrical response follows a power law behavior Rg=Ra(PH2)β with the coefficient β≈1.0.

[1] S. Uchiyama,et al. Characterization of coprecipitated nickel catalysts , 1989 .

[2] Norio Miura,et al. Electronic Interaction between Metal Additives and Tin Dioxide in Tin Dioxide-Based Gas Sensors , 1988 .

[3] P. K. Clifford,et al. Characteristics of semiconductor gas sensors I. Steady state gas response , 1982 .

[4] G. Raupp,et al. Effect of titania surface species on the chemisorption of CO and H2 on polycrystalline nickel , 1984 .

[5] S. Morrison. Selectivity in semiconductor gas sensors , 1987 .

[6] W. Estrada,et al. H Insertion and Electrochromism in NiO x Thin Films , 1992 .

[7] A. Gorenstein,et al. Toward Efficient Electrochromic NiO x Films A Study of Microstructure, Morphology, and Stoichiometry of Radio Frequency Sputtered Films , 1998 .