论文信息 - Thick film SOI technology: characteristics of devices and performance of circuits for high-energy physics at cryogenic temperatures; effects of ionizing radiation - 字舞流文

Thick film SOI technology: characteristics of devices and performance of circuits for high-energy physics at cryogenic temperatures; effects of ionizing radiation

Eric Delagnes | R. Truche | R. Chipaux | M. Rouger | N. Fourches | E. Orsier | P. Abbon | E. Delagnes | M. Rouger | R. Truche | J. Pontcharra | Nicolas Fourches | R. Chipaux | P. Pailler | E. Orsier | P. Abbon | P Pailler | J du Port de Pontcharra | M Sueur | M. Sueur

[1] D. Griscom,et al. Formation of interface traps in metal‐oxide‐semiconductor devices during isochronal annealing after irradiation at 78 K , 1991 .

[2] Naresh Chand,et al. Temperature dependence of current gain in AlGaAs/GaAs heterojunction bipolar transistors , 1984 .

[3] D. Griscom. Growth and decay kinetics of defect centers in high-purity fused silicas irradiated at 77 K with X-Rays or 6.4-eV laser light , 1990 .

[4] David Gingrich,et al. ATLAS - Letter of Intent for a General-Purpose pp Experiment at the Large Hadron Collider at CERN , 1992 .

[5] R.K. Kirschman,et al. Low-temperature electronics , 1990, IEEE Circuits and Devices Magazine.

[6] B. Lengeler,et al. Semiconductor devices suitable for use in cryogenic environments , 1974 .

[7] Nicolas T. Fourches. Charge buildup by irradiation in metal-oxide-semiconductor structures at cryogenic temperatures:mBasic mechanisms and influence of dose and dose rate , 1997 .