Highly efficient all‐nitride phosphor‐converted white light emitting diode
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F. Stadler | R. Mueller-Mach | G. Mueller | M. Krames | H. Höppe | W. Schnick | T. Juestel | P. Schmidt
[1] C. Jørgensen. CHAPTER 12 – CHEMICAL BONDING , 1962 .
[2] C. W. Struck,et al. Unified model of the temperature quenching of narrow-line and broad-band emissions , 1975 .
[3] H. Amano,et al. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI) , 1989 .
[4] Takashi Mukai,et al. InxGa(1−x)N/InyGa(1−y)N superlattices grown on GaN films , 1993 .
[5] W. Schnick,et al. Nitrido‐silicate. II [1]. Hochtemperatur‐Synthesen und Kristallstrukturen von Sr2Si5N8 und Ba2Si5N8 , 1995 .
[6] Shuji Nakamura,et al. Present performance of InGaN-based blue/green/yellow LEDs , 1997, Photonics West.
[7] W. Schnick,et al. Eu2Si5N8 and EuYbSi4N7. The first nitridosilicates with a divalent rare earth metal , 1997 .
[8] W. Schnick,et al. Nitridosilicates‐A Significant Extension of Silicate Chemistry , 1997 .
[9] Regina Mueller-Mach,et al. White-light-emitting diodes for illumination , 2000, Photonics West - Optoelectronic Materials and Devices.
[10] H. Höppe,et al. Luminescence in Eu 2+ -doped Ba 2 Si 5 N 8 : fluorescence, thermoluminescence, and upconversion , 2000 .
[11] Michael R. Krames,et al. High-power phosphor-converted light-emitting diodes based on III-Nitrides , 2002 .
[12] Hyperfine interactions in the 13 K ferromagnet Eu2Si5N8 , 2002 .
[13] Regina Mueller-Mach,et al. Illumination-grade white LEDs , 2002, SPIE Optics + Photonics.
[14] M. Whangbo,et al. Syntheses, Structures, and Optical Properties of Yellow Ce2SiS5, Ce6Si4S17, and Ce4Si3S12 Materials , 2003 .
[15] P. Dorenbos. Locating lanthanide impurity levels in the forbidden band of host crystals , 2004 .
[16] F. Stadler,et al. Ca[Si2o2n2]: A novel layer silicate , 2004 .
[17] Michael R. Krames,et al. Phosphor materials and combinations for illumination-grade white pcLEDs , 2004, SPIE Optics + Photonics.