论文信息 - A new model of tunnelling current and SILC in ultra-thin oxides

A new model of tunnelling current and SILC in ultra-thin oxides

We propose a new double-box model of the oxide conduction band of MOS devices, aiming to quantitatively predict the gate current across ultra-thin oxides. Simulations nicely fit the experimental quantum oscillations of the gate current in the Fowler-Nordheim tunnelling regime. The oscillation period of the gate current has been empirically correlated with the oxide thickness. The low-field stress induced leakage current can be fitted by our model as well, by inserting oxide traps mediating an inelastic trap-assisted tunnelling.

[1] K. Eikyu,et al. A quantitative analysis of time-decay reproducible stress-induced leakage current in SiO/sub 2/ films , 1997 .

[2] M. Heyns,et al. Determination of tunnelling parameters in ultra-thin oxide layer poly-Si/SiO2/Si structures , 1995 .

[3] Constantin Papadas,et al. Temperature dependence of the Fowler–Nordheim current in metal‐oxide‐degenerate semiconductor structures , 1995 .

[4] Gerard Ghibaudo,et al. Oscillatory behavior of the tunneling current in ultra thin gate dielectrics: Influence of various physical and technological parameters☆ , 1997 .

[5] A. Toriumi,et al. Experimental evidence of inelastic tunneling and new I-V model for stress-induced leakage current , 1996, International Electron Devices Meeting. Technical Digest.

[6] J. Maserjian,et al. Oscillations in MOS tunneling , 1975 .

[7] Jack C. Lee,et al. Modeling of stress-induced leakage current in ultrathin oxides with the trap-assisted tunneling mechanism , 1997 .

[8] Elyse Rosenbaum,et al. Mechanism of stress-induced leakage current in MOS capacitors , 1997 .

[9] Z. Weinberg,et al. On tunneling in metal‐oxide‐silicon structures , 1982 .

[10] Tierney,et al. Ballistic electron transport in thin silicon dioxide films. , 1987, Physical review. B, Condensed matter.