Development of perpendicularly magnetized Ta|CoFeB|MgO-based tunnel junctions at IBM (invited)

The discovery of perpendicular magnetic anisotropy (PMA) in Ta|CoFeB|MgO and the subsequent development of perpendicularly magnetized tunnel junctions at IBM is reviewed. The fast-turn-around method used for screening materials for interface PMA by measuring the moment/area and anisotropy field of in-plane materials as a function of CoFeB thickness is presented, including the data as a function of seed-layer material which led to the discovery of PMA in Ta|CoFeB|MgO. Magnetic and electrical data are reported for the first PMA magnetic tunnel junction we made using this material. By inserting a thin Fe layer at the Ta|CoFeB interface, a substantial increase in the PMA energy density was obtained. Pure Fe layers (which required the use of a TaMg seed) greatly improved the thermal stability, allowing annealing up to 400  °C.

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