Switching times variation of MOSFET devices with temperature and high-field stress
暂无分享,去创建一个
[1] Breakdown and stress-induced oxide degradation mechanisms in MOSFETs , 2002 .
[2] Kristel Fobelets,et al. Effect of temperature on the transfer characteristic of a 0.5 μm-gate Si:SiGe depletion-mode n-MODFET , 2004 .
[3] Chafic Salame,et al. Temperature dependence of a silicon power device switching parameters , 2006 .
[4] Leon M. Tolbert,et al. Effects of temperature variation (300–600 K) in MOSFET modeling in 6H–silicon carbide , 2004 .
[5] Kirtley,et al. Theory of high-field electron transport in silicon dioxide. , 1985, Physical review. B, Condensed matter.
[6] Leon M. Tolbert,et al. SYSTEM IMPACT OF SILICON CARBIDE POWER DEVICES , 2002 .
[7] Roland Habchi,et al. A faster power MOSFET device with electrical stress treatment , 2005 .
[8] Jean-Pierre Charles,et al. Use of electrical stress and isochronal annealing on power MOSFETs in order to characterize the effects of 60 Co irradiation , 2000 .
[9] B. Schineller,et al. Important aspects for the mass production of GaN-based quantum devices grown by MOCVD , 2007 .
[10] Martin Pölzl,et al. Ultra-thick gate oxides: charge generation and its impact on reliability , 2001, Microelectron. Reliab..