On-wafer characterization de-embedding and transmission line optimization on silicon for millimeter-wave applications

The design and implementation of transmission line based calibration standards, suitable for de-embedding on-wafer active and passive elements for millimeter-wave applications on silicon BiCMOS backend process technology, is investigated. Loss mechanisms, accuracy requirements, layout considerations, and impedance dependent characteristics of transmission line structures are discussed. The application of popular on-wafer, in situ calibration de-embedding approaches is evaluated. Methods to improve backend process technology for millimeter-wave applications are suggested, based upon transmission modeling using EM simulation tools. Modeled versus measured results are presented in support of conclusions.

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