On the impact of high-κ gate stacks on mobility: A Monte Carlo study including coupled SO phonon-plasmon scattering
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G. Bersuker | A. Asenov | J. Barker | J. Watling | Scott Roy | G. Ferrari | P. Zeitzoff
[1] Degeneracy and High Doping Effects in Deep Sub-Micron Relaxed and Strained Si n-MOSFETs , 2003 .
[2] A Non Perturbative Model of Surface Roughness Scattering for Monte Carlo Simulation of Relaxed Silicon n-MOSFETs , 2003 .
[3] E. Cartier,et al. Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering , 2001 .
[4] R. Wallace,et al. High-κ gate dielectrics: Current status and materials properties considerations , 2001 .
[5] S. Bass. Constituent quarks and g1 , 1999, hep-ph/9902280.
[6] S. Takagi,et al. On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration , 1994 .
[7] Ferry,et al. Surface roughness at the Si(100)-SiO2 interface. , 1985, Physical review. B, Condensed matter.
[8] C. Jacoboni,et al. The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials , 1983 .
[9] J. W. Harrison,et al. Theoretical calculations of electron mobility in ternary III‐V compounds , 1976 .
[10] L. Vegard,et al. Die Konstitution der Mischkristalle und die Raumfüllung der Atome , 1921 .