InGaAs/InP/AlGaAs/GaAs p-i-n photodetector array with low capacitance air-bridge coplanar metal waveguides and its monolithic WDM applications

Summary form only given. It is highly desirable to develop techniques for the monolithic integration of InGaAs photodiodes operating in the 1.0-1.6-/spl mu/m wavelength range with AlGaAs-GaAs-based optoelectronic and electronic devices for WDM applications. For very high-speed device applications, air-bridge coplanar metal waveguides can efficiently reduce the parasitic capacitance of diodes. In this paper, we report a novel air-bridges connected InGaAs detector on top of an AlGaAs-GaAs waveguide substrate with its monolithic WDM receiver module applications.