论文信息 - Single-mode operation of 500 Mbit/s modulated AlGaAs semiconductor laser by injection locking

Single-mode operation of 500 Mbit/s modulated AlGaAs semiconductor laser by injection locking

Single-mode operation of an AlGaAs double heterostructure semiconductor laser directly modulated at 500 Mbit/s data rate was realised by injection locking. The power ratio of central injected mode to total spectrum power was 94%.

Jun-Ichi Yamada | S. Kobayashi | Tomohiro Kimura | Shimon Machida

[1] R. Lang,et al. Suppression of the relaxation oscillation in the modulated output of semiconductor lasers , 1976 .

[2] Tatsuya Kimura,et al. Gain and saturation power of resonant AlGaAs laser amplifier , 1980 .

[3] T. Miya,et al. Ultimate low-loss single-mode fibre at 1.55 μm , 1979 .

[4] T. Kanada,et al. Injection laser characteristics due to reflected optical power , 1979 .

[5] S. Kobayashi,et al. Injection locking characteristics of an AlGaAs semiconductor laser , 1980 .