Investigating the ESD Robustness of RF Circuits and Elements by Transmission Line Pulsing

This work describes the application of a combined RF-TLP test set-up. It alternates between pulsed high current characterization and scattering parameter measurements up to 10 GHz in order to investigate the influence of the stress pulses on the RF behavior of the DUT. As an example, the high current behavior of a broad band amplifier circuit is analyzed. Furthermore the breakdown behavior of MIM capacitors fabricated in a GaAs technology is investigated.

[1]  Robert W. Dutton,et al.  RF ESD protection strategies: Codesign vs. low-C protection , 2005, 2005 Electrical Overstress/Electrostatic Discharge Symposium.

[2]  E. Rosenbaum,et al.  Combined TLP/RF testing system for detection of ESD failures in RF circuits , 2003, 2003 Electrical Overstress/Electrostatic Discharge Symposium.

[3]  Bart Keppens,et al.  ESD protection solutions for high voltage technologies , 2004 .

[4]  H. Gieser,et al.  Very fast transmission line pulsing of integrated structures and the charged device model , 1998, IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part C.

[5]  Benjamin Van Camp,et al.  ESD protection solutions for high voltage technologies , 2004, 2004 Electrical Overstress/Electrostatic Discharge Symposium.

[6]  Heinrich Wolf,et al.  A Dedicated TLP Set-Up to Investigate the ESD Robustness of RF Elements and Circuits , 2005, Microelectron. Reliab..