论文信息 - Gate current of a 'well-tempered' MOSFET simulated with the spherical-harmonic expansion model

Gate current of a 'well-tempered' MOSFET simulated with the spherical-harmonic expansion model

The solution method for the Boltzmann transport equation based on the spherical-harmonics expansion has been applied to the transport problem in a Si–SiO2 structure. The solver has been improved in order to fully simulate MOS structures. At the Si–SiO2 interface, the solution of the Schrodinger equation takes into account the carrier tunnelling across the energy-barrier discontinuity. Results of a 2D simulation are shown for different devices to validate the model.

Massimo Rudan | Susanna Reggiani | Giancarlo Perroni

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