Single and multilayer ferroelectric PbZrxTi1−xO3 (PZT) on BaTiO3

[1]  L. E. Cross,et al.  Thickness-dependent electrical characteristics of lead zirconate titanate thin films , 1995 .

[2]  W. Anderson,et al.  Low leakage current BaTiO3 thin film capacitors using a multilayer construction , 1995 .

[3]  W. Anderson,et al.  Nanolayer BaTiO3 thin film capacitors using magnetron sputtering , 1995 .

[4]  Jonathan J. Bernstein,et al.  Dielectric, ferroelectric, and piezoelectric properties of lead zirconate titanate thick films on silicon substrates , 1995 .

[5]  S. Leppävuori,et al.  Evaluation of PZT thin films on Ag coated Si substrates , 1994 .

[6]  Seshu B. Desu,et al.  Low temperature perovskite formation of lead zirconate titanate thin films by a seeding process , 1993 .

[7]  K. Etzold,et al.  Substrate and temperature effects in lead zirconate titanate films produced by facing targets sputtering , 1992 .

[8]  T. Shiosaki,et al.  Preparation and Switching Kinetics of Pb(Zr, Ti)O3 Thin Films Deposited by Reactive Sputtering , 1991 .

[9]  Hiroshi Toyoda,et al.  PZT Thin Film Preparation on Pt-Ti Electrode by RF Sputtering , 1991 .

[10]  Y. Sakashita,et al.  Metalorganic Chemical Vapor Deposition of c-Axis Oriented PZT Thin Films , 1990 .

[11]  Yoshihiro Tomita,et al.  Preparation of epitaxial Pb(ZrxTi1−x)O3 thin films and their crystallographic, pyroelectric, and ferroelectric properties , 1989 .

[12]  Michael Sayer,et al.  Preparation of Pb(Zr,Ti)O3 thin films by sol gel processing: Electrical, optical, and electro‐optic properties , 1988 .

[13]  Michael Sayer,et al.  Characterization of Pb(Zr,Ti)O3 thin films deposited from multielement metal targets , 1988 .

[14]  M. Okuyama,et al.  Ferroelectric Properties of RF Sputtered PLZT Thin Film , 1979 .