论文信息 - Reliability Characteristics of 200 GHz fT I285 GHz fMm SiGe HBTs

Reliability Characteristics of 200 GHz fT I285 GHz fMm SiGe HBTs

Reliabiliry characteristics of SiGe HBTs with 200GHz fr and 285 GHz fMare shown and discussed. We review the degradation from avalanche operation, and it is found that the degradation can be predicted using an empirical model that includes integrated avalanche charge and VCB. The model predicts acceptable lifetime degradation with operation up to 1.5-2XBVcE0. We also present for thefirst time detailed device degradation fiom accelerated temperature and current stress. The degradation observed compares favorably against other published silicon-based bipolar devices under comparable accelerated current stress.

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