Zinc sulfide nanowire arrays on silicon wafers for field emitters

Wurtzite structured zinc sulfide (ZnS) nanowire arrays are synthesized on silicon (111) wafers by a facile evaporation–condensation approach. These ZnS nanowire arrays possess predominant field emission properties with a low turn-on field of 2.9 V µm−1, a low threshold field of 4.25 V µm−1, a high field-enhancement factor (over 2700), and a high stability with a low fluctuation (∼0.8%). The improved field emission performance of these ZnS nanowire arrays is attributed to their specific crystallographic feature—array structures with nanotips and high single crystallinity. These results suggest that such ZnS nanowire arrays can be used as building blocks for field emitters.

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