论文信息 - Degradation behavior in InGaAs/GaAs strained-quantum well lasers

Degradation behavior in InGaAs/GaAs strained-quantum well lasers

Facet degradation mechanisms of a 980-nm InGaAs/GaAs strained-quantum well laser are analyzed by monitoring the optical-beam induced current. It is clarified that the behavior of defects around the facets govern the long-term stability as well as catastrophic-optical damage generation during operation.

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