Evidence that similar point defects cause 1/f noise and radiation-induced-hole trapping in metal-oxide-semiconductor transistors.

We have found that the 1/{ital f}-noise magnitude of unirradiated metal-oxide-semiconductor (MOS) transistors correlates strikingly with the radiation-induced-hole trapping efficiency of the oxide ({ital f}{sub OT}). This suggests that the previously unidentified defect that causes 1/{ital f} noise in MOS transistors is linked to the radiation-induced-hole trap, the {ital E}{prime} center,'' or to a direct precursor (likely a simple oxygen vacancy) known to be present in SiO{sub 2} before irradiation. We derive a simple equation that relates the noise and {ital f}{sub OT}.