论文信息 - Feedback Effects in the GaAs MESFET Model (Letters)

Feedback Effects in the GaAs MESFET Model (Letters)

GaAs MESFET models correctly predict a positive feedback conductance. The effect of common-lead inductance on Y/sub 12/ rising computer modeling techniques is examined. Experimental data are also included which indicate that the common-lead inductance of about 0.06 nH cannot be omitted from the model in order to accurately predict the feedback conductance.

G. D. Vendelin

[1] W. Fischer,et al. Equivalent circuit and gain of MOS field effect transistors , 1966 .

[2] G. D. Vendelin,et al. Circuit model for the GaAs m.e.s.f.e.t. valid to 12 GHz , 1975 .

[3] C. A. Liechti,et al. Performance of Dual-Gate GaAs MESFET's as Gain-Controlled Low-Noise Amplifiers and High-Speed Modulators , 1975 .

[4] R. Dawson,et al. Equivalent circuit of the Schottky-Barrier field-effect transistor at microwave frequencies , 1975 .

[5] H. Johnson,et al. A high-frequency representation of the MOS transistor , 1966 .