Magnetoresistive random access memory using magnetic tunnel junctions
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Jon M. Slaughter | Saied N. Tehrani | B. N. Engel | Renu W. Dave | R. W. Dave | M. Durlam | J. Janesky | N. D. Rizzo | B. Butcher | M. Deherrera | J. Salter | K. Smith | Gregory W. Grynkewich | J. Slaughter | N. Rizzo | K. Smith | S. Tehrani | M. Durlam | M. Deherrera | B. Engel | G. Grynkewich | B. Butcher | R. Dave | J. Janesky | M. DeHerrera | J. Salter | Ken Smith | Bradley N. Engel
[1] Stephen E. Russek,et al. High-speed characterization of submicrometer giant magnetoresistive devices , 1999 .
[2] V. Soares,et al. Large tunneling magnetoresistance enhancement by thermal anneal , 1998 .
[3] Etienne,et al. Giant magnetoresistance of (001)Fe/(001)Cr magnetic superlattices. , 1988, Physical review letters.
[4] M. Mentzer,et al. Fabrication and characterization of a crosstie random access memory , 1982 .
[5] Yu Lu,et al. Memories of tomorrow , 2002 .
[6] William J. Gallagher,et al. Magnetization Reversal in Micron-Sized Magnetic Thin Films , 1998 .
[7] Jian-Gang Zhu,et al. Magnetization vortices and anomalous switching in patterned NiFeCo submicron arrays , 1999 .
[8] Jijun Sun,et al. Low resistance and high thermal stability of spin-dependent tunnel junctions with synthetic antiferromagnetic CoFe/Ru/CoFe pinned layers , 2000 .
[9] Saied N. Tehrani,et al. Magnetostatic interactions between sub-micrometer patterned magnetic elements , 2001 .
[10] Binasch,et al. Enhanced magnetoresistance in layered magnetic structures with antiferromagnetic interlayer exchange. , 1989, Physical review. B, Condensed matter.
[11] Jon M. Slaughter,et al. Technology Status and Potential for High Speed Nonvolatile Magnetoresistive RAM , 2000 .
[12] William J. Gallagher,et al. Microstructured magnetic tunnel junctions (invited) , 1997 .
[13] Kinder,et al. Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junctions. , 1995, Physical review letters.
[14] B. N. Engel,et al. Fundamentals of MRAM Technology , 2002 .
[15] Saied N. Tehrani,et al. Edge-pinned states in patterned submicron NiFeCo structures , 2000 .
[16] Robert E. Fontana,et al. Low-field magnetoresistance in magnetic tunnel junctions prepared by contact masks and lithography: 25% magnetoresistance at 295 K in mega-ohm micron-sized junctions (abstract) , 1997 .
[17] Saied N. Tehrani,et al. Comparison of oxidation methods for magnetic tunnel junction material , 2000 .
[18] J. W. Brown. Thermal Fluctuations of a Single-Domain Particle , 1963 .
[19] Saied N. Tehrani,et al. High density submicron magnetoresistive random access memory (invited) , 1999 .
[20] W. Abdul-Razzaq,et al. Galvanomagnetic properties of Ag/M (M Fe, Ni, Co) layered metallic films , 1988 .
[21] Renard,et al. Enhanced magnetoresistance of ultrathin (Au/Co)n multilayers with perpendicular anisotropy. , 1988, Physical review. B, Condensed matter.
[22] H. Goronkin,et al. High density nonvolatile magnetoresistive RAM , 1996, International Electron Devices Meeting. Technical Digest.
[23] Etienne Snoeck,et al. Low-resistance spin-dependent tunnel junctions with ZrAlOx barriers , 2001 .
[24] Jagadeesh S. Moodera,et al. Ferromagnetic-insulator-ferromagnetic tunneling: Spin-dependent tunneling and large magnetoresistance in trilayer junctions (invited) , 1996 .
[25] Saied N. Tehrani,et al. Thermally activated magnetization reversal in submicron magnetic tunnel junctions for magnetoresistive random access memory , 2002 .
[26] Jon M. Slaughter,et al. The science and technology of magnetoresistive tunneling memory , 2002 .
[27] J. Daughton. Magnetoresistive memory technology , 1992 .
[28] Saied N. Tehrani,et al. Recent developments in magnetic tunnel junction MRAM , 2000 .
[29] M. Durlam,et al. A 256 kb 3.0 V 1T1MTJ nonvolatile magnetoresistive RAM , 2001, 2001 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC (Cat. No.01CH37177).
[30] Jian-Gang Zhu,et al. End Domain States and Magnetization Reversal in Submicron Magnetic Structures , 1998, 7th Joint MMM-Intermag Conference. Abstracts (Cat. No.98CH36275).
[31] William J. Gallagher,et al. Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited) , 1999 .
[32] E. Wohlfarth,et al. A mechanism of magnetic hysteresis in heterogeneous alloys , 1948, Philosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences.
[33] R. Scheuerlein,et al. A 10 ns read and write non-volatile memory array using a magnetic tunnel junction and FET switch in each cell , 2000, 2000 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.00CH37056).
[34] M. Johnson. Magnetoelectronic memories last and last , 2000 .
[35] Saied N. Tehrani,et al. Geometry dependence of magnetization vortices in patterned submicron NiFe elements , 2000 .
[36] D. R. Krahn,et al. The design of a one megabit non-volatile M-R memory chip using 1.5*5 mu m cells , 1988 .
[37] Albert Fert,et al. Inverse Tunnel Magnetoresistance in Co / SrTiO 3 / La 0.7 Sr 0.3 MnO 3 : New Ideas on Spin-Polarized Tunneling , 1999 .
[38] Frank Wang. Diode-free magnetic random access memory using spin-dependent tunneling effect , 2000 .
[39] L. J. Schwee,et al. The concept and initial studies of a crosstie random access memory (CRAM) , 1982 .
[40] T. Miyazaki,et al. Giant magnetic tunneling e ect in Fe/Al2O3/Fe junction , 1995 .
[41] J. Slaughter,et al. Progress and outlook for MRAM technology , 1999, IEEE International Magnetics Conference.