论文信息 - A slow-trap model for the kink effect on InAlAs/InP HFET

A slow-trap model for the kink effect on InAlAs/InP HFET

The kink effect in InAlAs/InP HFETs was examined in temperature and frequency dependent measurements. A slow states mechanism is found to be probably responsible for the increase of the drain-source conductance related to the kink effect. A deep-level with activation energy of 0.53 eV was deduced from drain conductance dispersion measurements. This level, with a slow emission rate at room temperature, seems to be associated with the kink effect.

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