Metamorphic HEMT MMICs and Modules for Use in a High-Bandwidth 210 GHz Radar

In this paper, we present the development of advanced W-band and G-band millimeter-wave monolithic integrated circuits (MMICs) and modules for use in a high-resolution radar system operating at 210 GHz. A W-band frequency multiplier by six as well as a subharmonically pumped 210 GHz dual-gate field-effect transistor (FET) mixer and a 105 GHz power amplifier circuit have been successfully realized using our 0.1 mum InAlAs/InGaAs based depletion-type metamorphic high electron mobility transistor (mHEMT) technology in combination with grounded coplanar circuit topology (GCPW). Additionally, a 210 GHz low-noise amplifier MMIC was fabricated using our advanced 0.05 mum mHEMT technology. To package the circuits, a set of waveguide-to-microstrip transitions has been realized on 50 mum thick quartz substrates, covering the frequency range between 75 and 220 GHz. The presented millimeter-wave components were developed for use in a novel 210 GHz radar demonstrator COBRA-210, which delivers an instantaneous bandwidth of 8 GHz and an outstanding spatial resolution of 1.8 cm.

[1]  A. Leuther,et al.  50 nm MHEMT Technology for G- and H-Band MMICs , 2007, 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials.

[2]  H. Essen,et al.  Very high bandwidth millimetre-wave radar , 2005 .

[3]  Sorin P. Voinigescu,et al.  CMOS SOCs at 100 GHz: System Architectures, Device Characterization, and IC Design Examples , 2007, 2007 IEEE International Symposium on Circuits and Systems.

[4]  R. Lai,et al.  InP HEMT and HBT applications beyond 200 GHz , 2002, Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307).

[5]  L. Samoska.  Towards Terahertz MMIC Amplifiers: Present Status and Trends , 2006, 2006 IEEE MTT-S International Microwave Symposium Digest.

[6]  M. Riessle,et al.  Compact single-chip W-band FMCW radar modules for commercial high-resolution sensor applications , 2002 .

[7]  Helmut Essen,et al.  High-bandwidth 220 GHz experimental radar , 2007 .

[8]  A. Leuther,et al.  A 210 GHz, Subharmonically-Pumped Active FET Mixer MMIC for Radar Imaging Applications , 2007, 2007 IEEE Compound Semiconductor Integrated Circuits Symposium.

[9]  Thomas E. Hall,et al.  Three-dimensional millimeter-wave imaging for concealed weapon detection , 2001 .

[10]  W. Deal,et al.  Sub 50 nm InP HEMT Device with Fmax Greater than 1 THz , 2007, 2007 IEEE International Electron Devices Meeting.

[11]  H. Massler,et al.  Metamorphic 94 GHz power amplifier MMICs , 2005, IEEE MTT-S International Microwave Symposium Digest, 2005..

[12]  H. Essen,et al.  220 GHz Low-Noise Amplifier Modules for Radiometric Imaging Applications , 2006, 2006 European Microwave Integrated Circuits Conference.

[13]  W. Deal,et al.  Demonstration of 184 and 255-GHz Amplifiers Using InP HBT Technology , 2008, IEEE Microwave and Wireless Components Letters.

[14]  M. Schlechtweg,et al.  Metamorphic 50 nm InAs-channel HEMT , 2005, International Conference on Indium Phosphide and Related Materials, 2005.

[15]  P. Chevalier,et al.  80/160-GHz Transceiver and 140-GHz Amplifier in SiGe Technology , 2007, 2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium.

[16]  A. Tessmann,et al.  220-GHz metamorphic HEMT amplifier MMICs for high-resolution imaging applications , 2005, IEEE Journal of Solid-State Circuits.

[17]  A. Leuther,et al.  Effect of gate metal on reliability of metamorphic HEMTs , 2001, 2001 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.01TH8602).

[18]  P. Siegel,et al.  Design and measurements of a 210 GHz subharmonically pumped GaAs MMIC mixer , 1992, 1992 IEEE Microwave Symposium Digest MTT-S.

[19]  B. Allen,et al.  A 180-GHz monolithic sub-harmonic InP-based HEMT diode mixer , 1999, IEEE Microwave and Guided Wave Letters.

[20]  Christopher A. Martin,et al.  Advances in millimeter-wave imaging technology for enhanced vision systems , 2002, Proceedings. The 21st Digital Avionics Systems Conference.

[21]  T. Mimura,et al.  Importance of gate-recess structure to the cutoff frequency of ultra-high-speed InGaAs/InAlAs HEMTs , 2002, Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307).

[22]  G. S. Dow,et al.  Large scale W-band focal plane array for passive radiometric imaging , 1996, 1996 IEEE MTT-S International Microwave Symposium Digest.

[23]  Stephen A. Maas,et al.  Nonlinear Microwave and RF Circuits , 2003 .

[24]  A. Tessmann,et al.  From 100 GHz to Terahertz Electronics - Activities in Europe , 2006, 2006 IEEE Compound Semiconductor Integrated Circuit Symposium.

[25]  B. Heydari,et al.  Nanoscale CMOS for mm-Wave Applications , 2007, 2007 IEEE Compound Semiconductor Integrated Circuits Symposium.

[26]  M. Schlechtweg,et al.  A Systematic State–Space Approach to Large-Signal Transistor Modeling , 2007, IEEE Transactions on Microwave Theory and Techniques.

[27]  Jeng-Han Tsai,et al.  A 86 to 108 GHz Amplifier in 90 nm CMOS , 2008, IEEE Microwave and Wireless Components Letters.

[28]  A. Leuther,et al.  A 150 to 220 GHz balanced doubler MMIC using a 50 nm metamorphic HEMT technology , 2005, European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005.

[29]  H. Essen,et al.  Metamorphic HEMT Amplifier Circuits for Use in a High Resolution 210 GHz Radar , 2007, 2007 IEEE Compound Semiconductor Integrated Circuits Symposium.

[30]  P. Siegel.  Terahertz Technology , 2001 .

[31]  A. Leuther,et al.  A Broadband Frequency Sixtupler MIMIC for the W-Band with >7 dBm Output Power and >6 dB Conversion Gain , 2007, 2007 IEEE/MTT-S International Microwave Symposium.

[32]  R. Lachner,et al.  A SiGe Monolithically Integrated 278 GHz Push-Push Oscillator , 2007, 2007 IEEE/MTT-S International Microwave Symposium.

[33]  J. W. Archer,et al.  176-200-GHz RECEIVER MODULE USING INDIUM PHOSPHIDE AND GALLIUM ARSENIDE MMICs , 2004 .