Radiation Effects in Microelectronics
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[1] Eric Delagnes,et al. DMILL, a mixed analog-digital radiation-hard BICMOS technology for high energy physics electronics , 1995 .
[2] Excess collector current due to an oxide-trapped-charge-induced emitter in irradiated NPN BJTs , 1994, Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
[3] N. Saks,et al. Interface trap formation via the two-stage H/sup +/ process , 1989 .
[4] R. Pease,et al. Total Dose Effects in Recessed Oxide Digital Bipolar Microcircuits , 1983, IEEE Transactions on Nuclear Science.
[5] peixiong zhao,et al. Physically based comparison of hot-carrier-induced and ionizing-radiation-induced degradation in BJTs , 1995 .
[6] Ronald D. Schrimpf,et al. Proton-induced defect generation at the Si-SiO/sub 2/ interface , 2001 .
[7] Total dose induced hole trapping in trench oxides , 1989 .
[8] K. F. Galloway,et al. A Simple Model for Separating Interface and Oxide Charge Effects in MOS Device Characteristics , 1984, IEEE Transactions on Nuclear Science.
[9] peixiong zhao,et al. Reactions of hydrogen with Si-SiO/sub 2/ interfaces , 2000 .
[10] R. A. Gardner,et al. Characterization of radiation effects on trench-isolated bipolar analog microcircuit technology , 1991, RADECS 91 First European Conference on Radiation and its Effects on Devices and Systems.
[11] Ronald D. Schrimpf,et al. Total-dose radiation response of hafnium-silicate capacitors , 2002 .
[12] Mechanisms of ionizing-radiation-induced degradation in modern bipolar devices , 1991, Proceedings of the 1991 Bipolar Circuits and Technology Meeting.
[13] Lloyd W. Massengill,et al. Evaluating average and atypical response in radiation effects simulations , 2003 .
[14] K. A. LaBel,et al. Evidence for angular effects in proton-induced single-event upsets , 2002 .
[15] peixiong zhao,et al. Defect generation by hydrogen at the Si- SiO(2) interface. , 2001, Physical review letters.
[16] John Y. Chen,et al. CMOS Devices and Technology for VLSI , 1990 .
[17] M. Turowski,et al. Nonuniform total-dose-induced charge distribution in shallow-trench isolation oxides , 2004, IEEE Transactions on Nuclear Science.
[18] Radiation-induced charge trapping in thin Al2O3/SiOxNy/Si(100) gate dielectric stacks. , 2003 .
[19] Ronald D. Schrimpf,et al. Gain degradation and enhanced low-dose-rate sensitivity in bipolar junction transistors , 2004 .
[20] P. Dodd,et al. Production and propagation of single-event transients in high-speed digital logic ICs , 2004, IEEE Transactions on Nuclear Science.
[21] Excess collector current due to an oxide-trapped-charge-induced emitter in irradiated NPN BJT's , 1995 .
[22] L. W. Massengill,et al. Dose-Rate Upset Patterns in a 16K CMOS SRAM , 1986, IEEE Transactions on Nuclear Science.
[23] Lloyd W. Massengill,et al. Basic mechanisms and modeling of single-event upset in digital microelectronics , 2003 .
[24] M. Dentan,et al. Study of a CMOS-JFET-bipolar radiation hard analog-digital technology suitable for high energy physics electronics , 1993 .
[25] The effects of emitter-tied field plates on lateral PNP ionizing radiation response , 1998, Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198).
[26] Jeffrey L. Titus,et al. Wafer Mapping of Total Dose Failure Thresholds in a Bipolar Recessed Field Oxide Technology , 1987, IEEE Transactions on Nuclear Science.
[27] Ronald D. Schrimpf. Recent advances in understanding total-dose effects in bipolar transistors , 1995 .
[28] D. Fleetwood. 'Border traps' in MOS devices , 1992 .
[29] Ronald D. Schrimpf,et al. Interface trapping properties of nMOSFETs with Al 2 O 3 /SiO x N y /Si(100) gate dielectric stacks after exposure to ionizing radiation , 2004 .
[30] B. L. Gregory,et al. Process Optimization of Radiation-Hardened CMOS Integrated Circuits , 1975, IEEE Transactions on Nuclear Science.
[31] J. Plummer,et al. Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces , 1980 .
[32] E. P. Gusev,et al. Radiation-induced charge trapping in thin Al/sub 2/O/sub 3//SiO/sub x/N/sub y//Si(100) gate dielectric stacks , 2003 .
[33] peixiong zhao,et al. Spatial and temporal characteristics of energy deposition by protons and alpha particles in silicon , 2004, IEEE Transactions on Nuclear Science.
[34] Kenneth F. Galloway,et al. Separation of effects of oxide-trapped charge and interface-trapped charge on mobility in irradiated power MOSFETs , 1993 .