Functionalization of transition metal dichalcogenides with metallic nanoparticles: implications for doping and gas-sensing.

Transition metal dichalcogenides (TMDs), belonging to the class of two-dimensional (2D) layered materials, have instigated a lot of interest in diverse application fields due to their unique electrical, mechanical, magnetic, and optical properties. Tuning the electrical properties of TMDs through charge transfer or doping is necessary for various optoelectronic applications. This paper presents the experimental investigation of the doping effect on TMDs, mainly focusing on molybdenum disulfide (MoS2), by metallic nanoparticles (NPs), exploring noble metals such as silver (Ag), palladium (Pd), and platinum (Pt) as well as the low workfunction metals such as scandium (Sc) and yttrium (Y) for the first time. The dependence of the doping behavior of MoS2 on the metal workfunction is demonstrated and it is shown that Pt nanoparticles can lead to as large as 137 V shift in threshold voltage of a back-gated monolayered MoS2 FET. Variation of the MoS2 FET transfer curves with the increase in the dose of NPs as well as the effect of the number of MoS2 layers on the doping characteristics are also discussed for the first time. Moreover, the doping effect on WSe2 is studied with the first demonstration of p-type doping using Pt NPs. Apart from doping, the use of metallic NP functionalized TMDs for gas sensing application is also demonstrated.

[1]  Shun Mao,et al.  Specific Protein Detection Using Thermally Reduced Graphene Oxide Sheet Decorated with Gold Nanoparticle‐Antibody Conjugates , 2010, Advanced materials.

[2]  Jing Guo,et al.  Degenerate n-doping of few-layer transition metal dichalcogenides by potassium. , 2013, Nano letters.

[3]  A. Radenović,et al.  Single-layer MoS2 transistors. , 2011, Nature nanotechnology.

[4]  Peide D. Ye,et al.  High-performance MoS2 field-effect transistors enabled by chloride doping: Record low contact resistance (0.5 kΩ·µm) and record high drain current (460 µA/µm) , 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

[5]  S. Grimme,et al.  A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu. , 2010, The Journal of chemical physics.

[6]  J. Bernède,et al.  Improvement in the Lifetime of Planar Organic Photovoltaic Cells through the Introduction of MoO3 into Their Cathode Buffer Layers , 2014 .

[7]  Konrad Colbow,et al.  A highly sensitive and selective hydrogen gas sensor from thick oriented films of MoS2 , 1996 .

[8]  Kinam Kim,et al.  High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals , 2012, Nature Communications.

[9]  Kaustav Banerjee,et al.  Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors , 2014 .

[10]  K. Banerjee,et al.  Proposal for all-graphene monolithic logic circuits , 2013 .

[11]  R. S. Mulliken.  Electronic Population Analysis on LCAO–MO Molecular Wave Functions. I , 1955 .

[12]  C. Xu,et al.  High-Frequency Behavior of Graphene-Based Interconnects—Part I: Impedance Modeling , 2011, IEEE Transactions on Electron Devices.

[13]  Xianfan Xu,et al.  Phosphorene: an unexplored 2D semiconductor with a high hole mobility. , 2014, ACS nano.

[14]  Pengcheng Xu,et al.  Decoration of ZnO nanowires with Pt nanoparticles and their improved gas sensing and photocatalytic performance , 2010, Nanotechnology.

[15]  Mustafa Lotya,et al.  Large‐Scale Exfoliation of Inorganic Layered Compounds in Aqueous Surfactant Solutions , 2011, Advanced materials.

[16]  Bin Liu,et al.  Hysteresis in single-layer MoS2 field effect transistors. , 2012, ACS nano.

[17]  P M Campbell,et al.  Chemical vapor sensing with monolayer MoS2. , 2013, Nano letters.

[18]  Chuan Xu,et al.  High-Frequency Behavior of Graphene-Based Interconnects—Part II: Impedance Analysis and Implications for Inductor Design , 2011, IEEE Transactions on Electron Devices.

[19]  Jason L. Johnson,et al.  Hydrogen Sensing Using Pd‐Functionalized Multi‐Layer Graphene Nanoribbon Networks , 2010, Advanced materials.

[20]  Thomas F. Kent,et al.  p-type doping of MoS2 thin films using Nb , 2014 .

[21]  K. Banerjee,et al.  Impact-ionization field-effect-transistor based biosensors for ultra-sensitive detection of biomolecules , 2013 .

[22]  P. Ajayan,et al.  Controllable and Rapid Synthesis of High-Quality and Large-Area Bernal Stacked Bilayer Graphene Using Chemical Vapor Deposition , 2014 .

[23]  H. Choi,et al.  Controlled exfoliation of molybdenum disulfide for developing thin film humidity sensor , 2014 .

[24]  J. Shan,et al.  Atomically thin MoS₂: a new direct-gap semiconductor. , 2010, Physical review letters.

[25]  K. Banerjee,et al.  Fundamental limitations of conventional-FET biosensors: Quantum-mechanical-tunneling to the rescue , 2012, 70th Device Research Conference.

[26]  Limin Jin,et al.  Selective Decoration of Au Nanoparticles on Monolayer MoS2 Single Crystals , 2013, Scientific Reports.

[27]  Lian Ji,et al.  Stable few-layer MoS2 rectifying diodes formed by plasma-assisted doping , 2013 .

[28]  Yong-Wei Zhang,et al.  Edge-dependent structural, electronic and magnetic properties of MoS2 nanoribbons , 2012 .

[29]  J. Coleman,et al.  Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials , 2011, Science.

[30]  Lain-Jong Li,et al.  Highly flexible MoS2 thin-film transistors with ion gel dielectrics. , 2012, Nano letters.

[31]  Phong Nguyen,et al.  Controlled, defect-guided, metal-nanoparticle incorporation onto MoS2 via chemical and microwave routes: electrical, thermal, and structural properties. , 2013, Nano letters.

[32]  P. Ye,et al.  Molecular Doping of Multilayer ${\rm MoS}_{2}$ Field-Effect Transistors: Reduction in Sheet and Contact Resistances , 2013, IEEE Electron Device Letters.

[33]  David-Wei Zhang,et al.  The physics and backward diode behavior of heavily doped single layer MoS2 based p-n junctions , 2013 .

[34]  Wei Liu,et al.  A computational study of metal-contacts to beyond-graphene 2D semiconductor materials , 2012, 2012 International Electron Devices Meeting.

[35]  M. Shur,et al.  Selective gas sensing with a single pristine graphene transistor. , 2012, Nano letters.

[36]  Fei Wang,et al.  Electron-doping-enhanced trion formation in monolayer molybdenum disulfide functionalized with cesium carbonate. , 2014, ACS nano.

[37]  Yi-sheng Liu,et al.  Air stable p-doping of WSe2 by covalent functionalization. , 2014, ACS nano.

[38]  A. Javey,et al.  High-performance single layered WSe₂ p-FETs with chemically doped contacts. , 2012, Nano letters.

[39]  Wei Chen,et al.  Modulating electronic transport properties of MoS2 field effect transistor by surface overlayers , 2013 .

[40]  K. Banerjee,et al.  Tunnel-field-effect-transistor based gas-sensor: Introducing gas detection with a quantum-mechanical transducer , 2013 .

[41]  Kevin M. Chen,et al.  Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density , 2014 .

[42]  Andre K. Geim,et al.  The rise of graphene. , 2007, Nature materials.

[43]  P. Ajayan,et al.  Large Area Vapor Phase Growth and Characterization of MoS2 Atomic Layers on SiO2 Substrate , 2011, 1111.5072.

[44]  AC conductance modeling and analysis of graphene nanoribbon interconnects , 2010, 2010 IEEE International Interconnect Technology Conference.

[45]  Andre K. Geim,et al.  Two-dimensional atomic crystals. , 2005, Proceedings of the National Academy of Sciences of the United States of America.

[46]  K. Banerjee,et al.  Proposal for tunnel-field-effect-transistor as ultra-sensitive and label-free biosensors , 2012 .

[47]  Kaustav Banerjee,et al.  Electron-hole duality during band-to-band tunneling process in graphene-nanoribbon tunnel-field-effect-transistors , 2010 .

[48]  L. Zhen,et al.  Carrier control of MoS2 nanoflakes by functional self-assembled monolayers. , 2013, ACS nano.

[49]  L. Guo,et al.  Enhancement of photovoltaic response in multilayer MoS2 induced by plasma doping. , 2014, ACS nano.

[50]  Wang Yao,et al.  Valley polarization in MoS2 monolayers by optical pumping. , 2012, Nature nanotechnology.

[51]  Wei Liu,et al.  2D electronics: Graphene and beyond , 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

[52]  Wei Liu,et al.  Role of metal contacts in designing high-performance monolayer n-type WSe2 field effect transistors. , 2013, Nano letters.

[53]  B. Chakraborty,et al.  Symmetry-dependent phonon renormalization in monolayer MoS2transistor , 2012, Physical Review B.

[54]  Hua Zhang,et al.  Fabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature. , 2012, Small.

[55]  Magneto-transport in MoS2: phase coherence, spin-orbit scattering, and the hall factor. , 2013, ACS nano.

[56]  A. Zunger,et al.  Self-interaction correction to density-functional approximations for many-electron systems , 1981 .

[57]  K. Banerjee,et al.  MoS₂ field-effect transistor for next-generation label-free biosensors. , 2014, ACS nano.

[58]  Qing Hua Wang,et al.  Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. , 2012, Nature nanotechnology.

[59]  Hidekazu Shimotani,et al.  Liquid-gated electric-double-layer transistor on layered metal dichalcogenide, SnS2 , 2011 .

[60]  Yu-Chuan Lin,et al.  Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates. , 2012, Nano letters.

[61]  Dominique Baillargeat,et al.  From Bulk to Monolayer MoS2: Evolution of Raman Scattering , 2012 .

[62]  J. Grossman,et al.  Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating. , 2013, Nano letters.

[63]  Ting Zhang,et al.  Palladium Nanoparticles Decorated Single-Walled Carbon Nanotube Hydrogen Sensor , 2007 .

[64]  Yuhei Miyauchi,et al.  Tunable photoluminescence of monolayer MoS₂ via chemical doping. , 2013, Nano letters.

[65]  Wei Cao,et al.  Graphene and beyond-graphene 2D crystals for next-generation green electronics , 2014, Defense + Security Symposium.