Small signal GaAs MESFET model parameters extracted from measured S-parameters

A small signal GaAs FET model is derived based on measured s-parameters. The model parameters have been found using a computer aided optimization program, where the initial value of the circuit elements are determined in part from measured s-parameters at 1 GHz, and in part from DC measurements. By using the optimization program, it is to be noted that the final value of some circuit elements is changed by a negligible amount compared with its initial value. Some other circuit elements which have large changes between their initial and final values, can be readjusted using the second order approximation.

[1]  H. Kondoh,et al.  An Accurate FET Modelling from Measured S-Parameters , 1986, 1986 IEEE MTT-S International Microwave Symposium Digest.

[2]  G. Nuzillat,et al.  Saturation mechanism in 1-µm gate GaAs FET with channel—Substrate interfacial barrier , 1980, IEEE Transactions on Electron Devices.

[3]  S. Asai,et al.  Excess gate current analysis of junction gate FET's by two- dimensional computer simulation , 1978, IEEE Transactions on Electron Devices.

[5]  Hermann A. Haus,et al.  Noise characteristics of gallium arsenide field-effect transistors , 1974 .

[6]  R. Anholt,et al.  Equivalent-circuit parameter extraction for cold GaAs MESFET's , 1991 .

[7]  Manfred Berroth,et al.  High-frequency equivalent circuit of GaAs FETs for large-signal applications , 1991 .

[8]  M. Berroth,et al.  Broad-band determination of the FET small-signal equivalent circuit , 1990 .

[9]  G. Dambrine,et al.  A new method for determining the FET small-signal equivalent circuit , 1988 .

[10]  W. Curtice.  GaAs MESFET modeling and nonlinear CAD , 1988 .

[11]  Lawrence Dunleavy,et al.  Extraction techniques for FET switch modeling , 1995 .

[12]  B. Himsworth,et al.  A two-dimensional analysis of indium phosphide junction field effect transistors with long and short channels , 1972 .

[13]  Jun'ichi Sone,et al.  A small-signal analytical theory for GaAs field-effect transistors at large drain voltages , 1978, IEEE Transactions on Electron Devices.

[14]  V. G. Gelnovatch.  A Computer Program for the Direct Calibration of Two- Port Reflectometers for Automated Microwave Measurements (Short Papers) , 1976 .

[15]  Mark F. Bocko.  Noise characteristics of a cryogenically cooled GaAs metal semiconductor field effect transistor at 4 MHz , 1984 .

[16]  Sorab K. Ghandhi,et al.  General theory for pinched operation of the junction-gate FET , 1969 .

[17]  Bumman Kim,et al.  A GaAs FET Model for Large-Signal Applications , 1984 .