The effect of the Si/N treatment of a nitridated sapphire surface on the growth mode of GaN in low-pressure metalorganic vapor phase epitaxy
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S. Haffouz | Pierre Gibart | Bernard Beaumont | F. Omnès | F. Omnès | P. Vennégués | S. Haffouz | B. Beaumont | P. Mierry | P. Gibart | P. Vennéguès | H. Lahrèche | P. de Mierry | H. Lahrèche
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