Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD

Abstract Hot-Wire Chemical Vapor Deposition has led to microcrystalline silicon solar cell efficiencies similar to those obtained with Plasma Enhanced CVD. The light-induced degradation behavior of microcrystalline silicon solar cells critically depends on the properties of their active layer. In the regime close to the transition to amorphous growth (around 60% of amorphous volume fraction), cells incorporating an intrinsic layer with slightly higher crystalline fraction and [220] preferential orientation are stable after more than 7000 h of AM1.5 light soaking. On the contrary, solar cells whose intrinsic layer has a slightly lower crystalline fraction and random or [111] preferential orientation exhibit clear light-induced degradation effects. A revision of the efficiencies of Hot-Wire deposited microcrystalline silicon solar cells is presented and the potential efficiency of this technology is also evaluated.

[1]  Kenji Yamamoto,et al.  Cost effective and high-performance thin film Si solar cell towards the 21st century , 2001 .

[2]  J. Rath,et al.  Purely Intrinsic Poly-silicon Films for n-i-p Solar Cells , 1997 .

[3]  D. Staebler,et al.  Reversible conductivity changes in discharge‐produced amorphous Si , 1977 .

[4]  H. Okamoto,et al.  Mobility-lifetime product and interface property in amorphous silicon solar cells , 1983 .

[5]  M. Konagai,et al.  High-rate deposition of silicon thin-film solar cells by the hot-wire cell method , 2001 .

[6]  Y. Poissant,et al.  Transport properties of hot-wire CVD μc-Si:H layers for solar cells , 2002 .

[7]  P. Stradins.  Light-induced degradation in a-Si:H and its relation to defect creation , 2003 .

[8]  Makoto Konagai,et al.  2-Step Growth Method and Microcrystalline Silicon Thin Film Solar Cells Prepared by Hot Wire Cell Method , 2003, 3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of.

[9]  J. Andreu,et al.  Polycrystalline silicon films obtained by hot-wire chemical vapour deposition , 1994 .

[10]  Diego Fischer,et al.  Microcrystalline/micromorph silicon thin-film solar cells prepared by VHF-GD technique , 2001 .

[11]  G. G. Stokes.  "J." , 1890, The New Yale Book of Quotations.

[12]  J. Merten,et al.  Analysis of the role of mobility-lifetime products in the performance of amorphous silicon p-i-n solar cells , 1999 .

[13]  Control of doped layers in p–i–n microcrystalline solar cells fully deposited with HWCVD , 2004 .

[14]  J. Andreu,et al.  Optimisation of doped microcrystalline silicon films deposited at very low temperatures by hot-wire CVD , 2000 .

[15]  R. Schropp,et al.  Deposition of HWCVD poly-Si films at a high growth rate , 2003 .

[16]  J. Merten,et al.  Improved equivalent circuit and analytical model for amorphous silicon solar cells and modules , 1998 .

[17]  Priyank V. Kumar,et al.  Preparation of microcrystalline single junction and amorphous-microcrystalline tandem silicon solar cells entirely by hot-wire CVD , 2004 .

[18]  Michael Grimm,et al.  Intrinsic microcrystalline silicon prepared by hot-wire chemical vapour deposition for thin film solar cells , 2003 .

[19]  J. Andreu,et al.  Studies on grain boundaries in nanocrystalline silicon grown by hot-wire CVD , 2002 .

[20]  Diego Fischer,et al.  Microcrystalline silicon and micromorph tandem solar cells , 1999 .

[21]  Shinzo Takata,et al.  Heat treatment in hydrogen gas and plasma for transparent conducting oxide films such as ZnO, SnO2 and indium tin oxide , 1989 .