.The small-signal performance and model of an LDMOSFET on high-resistivity SOI

We have fabricated an LDMOSFET on high-resistivity silicon-on-insulator (SOI) wafer. The electrical characteristics of the transistor (DC/RF) which is executed at the wafer level are presented. For 1/spl mu/m gate length, this transistor has an on-state breakdown voltage of greater than 10 V and an off-state breakdown voltage of greater than 20 V, and f/sub t/ is greater than 4GHz. The model of this device in DC characteristics is presented using EPFL-EKV MOSFET model, and the main intrinsic parameters are extracted.

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