Silicon anisotropic etching in KOH-isopropanol etchant

Abstract Silicon monocrystalline wafers of (100), (110) and (111) orientations are etched in KOH-isopropanol solution. SiO 2 layers patterned with a few types of figures are used as a mask for the etching of holes or islands. The planes that disappear and develop during the etching process are pointed out. the shapes of the etched figures are compared with the crystallographic description of silicon structure.