RECOMBINATION PARAMETERS MEASUREMENT IN SILICON DOUBLE SIDED SURFACE FIELD SOLAR CELL

This work deals with a new approach of minority carrier diffusion length L and the back-surface recombination velocity SB determination in bifacial solar cells by means of measured short-circuit current Jsc1 and Jsc2 corresponding respectively to the solar cell front side and back-side illumination. The dependence of such recombination parameters on the illumination intensity is then analysed. Resume: