Interaction of La2O3 capping layers with HfO2 gate dielectrics
暂无分享,去创建一个
Eduard A. Cartier | Supratik Guha | Vijay Narayanan | Vamsi K. Paruchuri | Nestor A. Bojarczuk | M. Copel | E. Cartier | V. Narayanan | M. Copel | N. Bojarczuk | S. Guha | V. Paruchuri
[1] G. Wilk,et al. Chemical vapor deposition of HfO2 films on Si(100) , 2002 .
[2] V. Narayanan,et al. Examination of flatband and threshold voltage tuning of HfO2∕TiN field effect transistors by dielectric cap layers , 2007 .
[3] Akira Toriumi,et al. Origin of electric dipoles formed at high-k/SiO2 interface , 2009 .
[4] A. Kingon,et al. Lanthanum silicate gate dielectric stacks with subnanometer equivalent oxide thickness utilizing an interfacial silica consumption reaction , 2005 .
[5] S. Van Elshocht,et al. The Impact of Stacked Cap Layers on Effective Work Function With HfSiON and SiON Gate Dielectrics , 2008, IEEE Electron Device Letters.
[6] T. C. Mcgill,et al. Measurement of the valence‐band offset in strained Si/Ge (100) heterojunctions by x‐ray photoelectron spectroscopy , 1990 .
[7] Reaction of barium oxide threshold voltage tuning layers with SiO2 and HfO2/SiO2 gate dielectrics , 2008 .
[8] E. Cartier,et al. Formation of a stratified lanthanum silicate dielectric by reaction with Si(001) , 2001 .
[9] Hemanth Jagannathan,et al. Engineering High Dielectric Constant Materials for Band-Edge CMOS Applications , 2008 .
[10] T. Schram,et al. Effective work function modulation by controlled dielectric monolayer deposition , 2006 .
[11] Eduard A. Cartier,et al. Atomic beam deposition of lanthanum- and yttrium-based oxide thin films for gate dielectrics , 2000 .
[12] Husam N. Alshareef,et al. Work function engineering using lanthanum oxide interfacial layers , 2006 .
[13] A. Chin,et al. Tuning effective metal gate work function by a novel gate dielectric HfLaO for nMOSFETs , 2006, IEEE Electron Device Letters.
[14] B. E. White,et al. Contributions to the effective work function of platinum on hafnium dioxide , 2004 .
[15] Hongfa Luan,et al. On Oxygen Deficiency and Fast Transient Charge-Trapping Effects in High-$k$ Dielectrics , 2006, IEEE Electron Device Letters.
[16] Akira Toriumi,et al. Structural and electrical properties of HfLaOx films for an amorphous high-k gate insulator , 2006 .
[17] Mark C. Reuter,et al. Interlayer composition of HfO2∕Si(001) films , 2004 .