A global description of the base current 1/f noise of polysilicon emitter bipolar transistors before and after hot-carrier stress

Abstract The aim of this paper is to establish a global semi-empirical description for low-frequency 1/f noise of polysilicon emitter bipolar junction transistors, which is compatible with circuit simulation demands. The model is suitable for a wide range of operation conditions, before and after the application of hot-carrier stress. It turns out that the 1/f noise can be described by in total 6 parameters: two which characterise the pre-stress behaviour and are sensitive functions of the poly emitter interface engineering and the peripheral emitter/base junction engineering. The four others describe the increase in the 1/f noise observed at low base currents, after the application of reverse bias constant-current stress.

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