论文信息 - CIGS solar cell with MBE-grown ZnS buffer layer

CIGS solar cell with MBE-grown ZnS buffer layer

Abstract Cu(In 0.52 Ga 0.48 )Se 2 solar cell performance with an MBE-grown ZnS buffer layer was studied. It was found that cell performance with the ZnS buffer layer was inferior compared to that with the CdS buffer layer; however, by insertion of a 50 nm CdS layer in addition to the ZnS buffer layer, the device performance was improved and was better than that with the CdS buffer layer. The higher device performance by using the ZnS/CdS double buffer layer may be due to the improved interface properties of the device.

[1] P. Fons,et al. Effect of band offset on the open circuit voltage of heterojunction CuIn1-xGaxSe2 solar cells , 2004 .

[2] Rommel Noufi,et al. Progress toward 20% efficiency in Cu(In,Ga)Se2 polycrystalline thin‐film solar cells , 1999 .

[3] R. Bechmann,et al. Numerical data and functional relationships in science and technology , 1969 .

[4] H. Takakura,et al. Control of conduction band offset in wide-gap Cu(In,Ga)Se solar cells , 2003 .

[5] T. Nakada,et al. 18% Efficiency Cd-Free Cu(In, Ga)Se2 Thin-Film Solar Cells Fabricated Using Chemical Bath Deposition (CBD)-ZnS Buffer Layers , 2002 .

[6] P. Fons,et al. In situ diagnostic methods for thin‐film fabrication: utilization of heat radiation and light scattering , 2004 .

[7] Lars Stolt,et al. Zn(O,S) buffer layers by atomic layer deposition in Cu(In,Ga)Se2 based thin film solar cells: Band alignment and sulfur gradient , 2006 .

[8] C. Kittel. Introduction to solid state physics , 1954 .