论文信息 - Lasing of wavelength-tunable (1.55μm region) InAs∕InGaAsP∕InP (100) quantum dots grown by metal organic vapor-phase epitaxy - 字舞流文

Lasing of wavelength-tunable (1.55μm region) InAs∕InGaAsP∕InP (100) quantum dots grown by metal organic vapor-phase epitaxy

The authors report lasing of InAs∕InGaAsP∕InP (100) quantum dots (QDs) wavelength tuned into the 1.55μm telecom region. Wavelength control of the InAs QDs in an InGaAsP∕InP waveguide is based on the suppression of As∕P exchange through ultrathin GaAs interlayers. The narrow ridge-waveguide QD lasers operate in continuous wave mode at room temperature on the QD ground state transition. The low threshold current density of 580A∕cm2 and low transparency current density of 6A∕cm2 per QD layer, measured in pulsed mode, are accompanied by low loss and high gain with an 80-nm-wide gain spectrum.

Y Yohan Barbarin | E. Smalbrugge | R Richard Nötzel | P. J. van Veldhoven | T. de Vries | MK Meint Smit | F. W. M. van Otten | G. Servanton | E. A. J. M. Bente | M. Smit | E. J. Geluk | E. Bente | S. Anantathanasarn | R. Nötzel | T. D. Vries | Y. Oei | P. Veldhoven | F. Otten | Tj Tom Eijkemans | J. Wolter | E. Smalbrugge | G. Servanton | TJ Tom Eijkemans | JH Joachim Wolter | Y. Barbarin | S. Anantathanasarn | Ys Oei

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