Characterization of vacancy-type defects in heteroepitaxial GaN grown by low-energy plasma-enhanced vapor phase epitaxy
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H. Känel | A. Calloni | R. Ferragut | A. Dupasquier | W. Egger | A. Guiller | L. Ravelli | A. Rutz
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H. Känel | A. Calloni | R. Ferragut | A. Dupasquier | W. Egger | A. Guiller | L. Ravelli | A. Rutz