论文信息 - An oxide electrothermal filter in standard CMOS

An oxide electrothermal filter in standard CMOS

Due to their relatively stable phase shift over temperature, electrothermal filters (ETFs) with an oxide heat path have been used as on-chip phase references, e.g. for thermal diffusivity (TD) temperature sensors. However, previous oxide ETFs were limited to SOI processes, whose deep-trench isolation could be used to create an oxide-dominated heat path. This paper describes, for the first time, an oxide ETF realized in a bulk CMOS process. It achieves a phase spread of 0.6 % (3 sigma, no trim) from −40 °C to 125 °C. When used as a reference for a TD temperature sensor, this translates into a temperature sensing spread of ±2.7 °C (3 sigma, no trim). This is 1.8 times less than the spread reported for SOI implementations, making the CMOS variant not only feasible, but also competitive.

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