Stress compensation in laser diodes

Stress compensation in GaAs‐(Ga,Al)As laser diodes is discussed. The stress distributions in the laser diodes are theoretically simulated by the finite element method. The photoelastic effect is used to observe the actual strain fields. It is found by simulation that the stress can be minimized by optimizing the Si submount thickness. Lasers fabricated with the optimized submount successfully exhibit low strain fields.