First observation of paramagnetic nitrogen dangling-bond centers in silicon nitride.

We report the first definitive identification of nitrogen dangling bonds in silicon nitride. A computer analysis of 14 N hyperfine parameters shows that the unpaired electron is strongly localized on the central nitrogen atom and that the unpaired electron's wave function is almost entirely p in character. This is only the second fundamental intrinsic electron-paramagnetic-resonance center to be identified in silicon nitride