Toward a fully integrated 2.4 GHz differential pair class-E power amplifier using on-chip RF power transformers for Bluetooth systems

Abstract In this work, a 2.4 GHz differential pair Class-E PA with two ideal RF power transformers is designed and simulated for Bluetooth systems, in a 0.13 μm CMOS process. This design is proposed to mitigate the voltage stress on each active CMOS device; hereby it prevents the device from breaking down. The PA provides output power of 22.83 dBm, power gain of 17.83 dB, and 31.13% PAE at 2.4 GHz with 1 V. The ideal power transformers are replaced with their on-chip power transformers. On-chip power transformers (power divider and power combiner) are designed and improved, in order to realize a fully integrated Bluetooth PA.

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