Control of carrier lifetime of thick n-type 4H-SiC epilayers by high-temperature Ar annealing

We investigated the carrier lifetime and Z1/2 center density of thick n-type 4H-SiC epilayers, which were oxidized and subsequently annealed in Ar at high temperatures. The Z1/2 center density decreased below the detection limit in the region to, at least, a 130 µm depth by thermal oxidation. After subsequent high-temperature annealing, the Z1/2 center density increased with increasing annealing temperature, while the distribution of the Z1/2 center density was nearly uniform to a 130 µm depth. The carrier lifetime could be controlled from 26 to 2.4 µs by changing the annealing temperature from 1600 to 1800 °C.

[1]  Lin Cheng,et al.  27 kV, 20 A 4H-SiC n-IGBTs , 2015 .

[2]  T. Kimoto.  Material science and device physics in SiC technology for high-voltage power devices , 2015 .

[3]  Tsunenobu Kimoto,et al.  Ultrahigh-Voltage SiC p-i-n Diodes With Improved Forward Characteristics , 2015, IEEE Transactions on Electron Devices.

[4]  E. Janzén,et al.  Quantitative comparison between Z1∕2 center and carbon vacancy in 4H-SiC , 2014 .

[5]  A. Hallén,et al.  Formation of carbon vacancy in 4H silicon carbide during high-temperature processing , 2014 .

[6]  E Janzén,et al.  Negative-U system of carbon vacancy in 4H-SiC. , 2012, Physical review letters.

[7]  Tsunenobu Kimoto,et al.  Carrier Recombination in n-Type 4H-SiC Epilayers with Long Carrier Lifetimes , 2012 .

[8]  T. Kimoto,et al.  High temperature annealing of n-type 4H-SiC: Impact on intrinsic defects and carrier lifetime , 2012 .

[9]  H. Tsuchida,et al.  Evaluation of long carrier lifetimes in thick 4H silicon carbide epitaxial layers , 2010 .

[10]  T. Kimoto,et al.  Impacts of recombination at the surface and in the substrate on carrier lifetimes of n-type 4H–SiC epilayers , 2010 .

[11]  T. Kimoto,et al.  Lifetime‐killing defects in 4H‐SiC epilayers and lifetime control by low‐energy electron irradiation , 2008 .

[12]  H. Tsuchida,et al.  Enhanced annealing of the Z1∕2 defect in 4H–SiC epilayers , 2008 .

[13]  Tsunenobu Kimoto,et al.  Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation , 2007 .

[14]  Hidekazu Tsuchida,et al.  Reduction of traps and improvement of carrier lifetime in 4H-SiC epilayers by ion implantation , 2007 .

[15]  B. V. Shanabrook,et al.  Lifetime-limiting defects in n− 4H-SiC epilayers , 2006 .

[16]  H. Matsunami,et al.  Electronic behaviors of high-dose phosphorus-ion implanted 4H-SiC(0001) , 2004 .

[17]  M. Melloch,et al.  Status and prospects for SiC power MOSFETs , 2002 .

[18]  Robert P. Devaty,et al.  Absorption coefficient of 4H silicon carbide from 3900 to 3250 Å , 1998 .

[19]  Tsunenobu Kimoto,et al.  Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy , 1997 .