论文信息 - Demonstration of Schottky barrier diode integrated in 200 V power p-GaN HEMTs technology with robust stability - 字舞流文

Demonstration of Schottky barrier diode integrated in 200 V power p-GaN HEMTs technology with robust stability

S. Decoutere | B. de Jaeger | D. Wellekens | O. Syshchyk | Tian-Li Wu | B. Bakeroot | J. O. Gallardo | Sachidananda Dash | Thanh Nga Tran | Zhengwei Huang | Shun-Wei Tang