Full-chip lithography simulation and design analysis: how OPC is changing IC design

Ten years ago Model-Based OPC (MB-OPC) was a research project of questionable usefulness, seen possibly as a fix until the next generation stepper was available. Today MB-OPC is one of the key technologies enabling 90nm production. In that brief span many technological challenges were resolved to allow MB-OPC to be performed on full chip layout with manageable computer resources and turnaround times. As MB-OPC has transitioned from a research to a production activity, several organizational challenges have arisen. Defining the steps and procedures involved in creating OPC techfiles has been necessary to allow the increased workload to be shared. Testing and documenting the OPC recipes has become a necessary discipline to ensure quality and repeatability in manufacturing. In addition to the engineers who create the OPC recipes, we now also have Fab OPC Engineers to support OPC verification and continuous improvement activities. Furthermore, the OPC process, i.e. the modification of the layout to account for the manufacturing process, has provided a tantalizing link between the design, process development and yield engineering communities. The EDA framework appears to provide a common language, however we are just beginning to ask the right questions to allow us to unlock the potential that appears so close. The paper will begin with a historical overview of the development of MB-OPC and describe the seemingly overwhelming obstacles, both computational and in mask fabrication that had to be overcome. The second part of the paper will deal with some of the problems that have arisen as MB-OPC has become a critical technology for high volume production. The final part of the paper will discuss how MB-OPC has changed the way that Lithography, Integration and Design engineers interact. Some examples of design/process interaction will be given as well as a discussion of future developments.

[1]  Thomas Kailath,et al.  Phase-shifting masks for microlithography: automated design and mask requirements , 1994 .

[2]  Peter Tichy,et al.  Evaluation of a new-generation photomask develop system for CAR , 2004, SPIE Photomask Technology.

[3]  Martin C. Peckerar,et al.  Proximity correction for electron beam lithography , 1996 .

[4]  Thomas Kailath,et al.  Computer-aided optimal design of phase-shifting masks , 1992, Advanced Lithography.

[5]  James D. Meindl,et al.  Impact of die-to-die and within-die parameter fluctuations on the maximum clock frequency distribution for gigascale integration , 2002, IEEE J. Solid State Circuits.

[6]  Franklin M. Schellenberg Design for manufacturing in the semiconductor industry: the Litho/Design Workshops , 1999, Proceedings Twelfth International Conference on VLSI Design. (Cat. No.PR00013).

[7]  Frank E. Abboud,et al.  Raster Shaped Beam Pattern Generation for 70 nm Photomask Production , 2002, Photomask Technology.

[8]  B. Singh,et al.  Design-based metrology: advanced automation for CD-SEM recipe generation , 2005, SPIE Advanced Lithography.

[9]  Hirohiko Honda,et al.  Solution for 100nm - EBM-4000 , 2002 .

[10]  Christophe Pierrat,et al.  Automated optical proximity correction: a rules-based approach , 1994, Advanced Lithography.

[11]  Avideh Zakhor,et al.  Mathematical and CAD framework for proximity correction , 1996, Advanced Lithography.

[12]  Avideh Zakhor,et al.  Binary and phase shifting mask design for optical lithography , 1992 .

[13]  Roger Fabian W. Pease,et al.  High-throughput high-density mapping and spectrum analysis of transistor gate length variations in SRAM circuits , 2001 .

[14]  David Blaauw,et al.  Impact of lithography variability on statistical timing behavior , 2004, SPIE Advanced Lithography.

[15]  Lorena Page,et al.  Use of design pattern layout for automatic metrology recipe generation , 2005, SPIE Advanced Lithography.

[16]  Steven A. Orszag,et al.  Derivation and Simulation of Higher Numerical Aperture Scalar Aerial Images , 1992 .

[17]  Tadahiro Takigawa,et al.  Representative Figure Method for Proximity Effect Correction , 1991 .

[18]  Pat LaCour,et al.  OASIS-based data preparation flows: progress report on containing data size explosion , 2004, SPIE Advanced Lithography.

[19]  Vishal Garg,et al.  DUV laser lithography for photomask fabrication , 2003, SPIE Photomask Technology.

[20]  G. Owen Proximity effect correction in electron-beam lithography , 1993 .

[21]  Ebo H. Croffie,et al.  Electrical validation of resolution enhancement techniques , 2003, SPIE Advanced Lithography.

[22]  Hans-Juergen Brueck,et al.  Mask Error Enhancement-Factor (MEEF) metrology using automated scripts in CATS , 2002, Photomask Technology.

[23]  Yuri Granik,et al.  New concepts in OPC , 2004, SPIE Advanced Lithography.

[24]  Roger Fabian W. Pease,et al.  Exploiting structure in fast aerial image computation for integrated circuit patterns , 1997 .

[25]  G.E. Moore,et al.  Cramming More Components Onto Integrated Circuits , 1998, Proceedings of the IEEE.

[26]  Michael L. Rieger,et al.  Fast proximity correction with zone sampling , 1994, Advanced Lithography.

[27]  Hiroshi Maruyama,et al.  Process bias control with thin Cr film blanks for 90nm-node reticle fabrication , 2002, Photomask Technology.