The .Si identical to Si3 defect at various (111)Si/SiO2 and (111)Si/Si3N4 interfaces

The low-temperature (2<or=T<or=45 K) X- and K-band electron spin resonance (ESR) properties of the Si/SiO2 interfacial (111) PbO defect-identified with .Si identical to Si3 and with the unpaired sp3 hybrid along (111)-as localised at three 'different' (111)Si/SiO2 interfaces, are comparatively surveyed. It is observed that differences in the ESR details develop in moving from state-of-the-art thermally oxidised Si/SiO2 over a Si/SiO2 structure grown under strongly reduced O2 pressure to the Si/native oxide case, indicating increasing interfacial strain or disorder. Secondly, ESR data are presented on the first observation of the .Si identical to Si3 defect-now called (111)PbNO-in (111)Si/Si3N4, thermally grown at 1100+or-20 degrees C in NH3. The main ESR signatures of the PbO and PbNO centres are very similar, from which their common origin is concluded. Yet, the differences in ESR properties from state-of-the-art Si/SiO2 to the Si/native SiO2 structures are all exhibited by PbNO too; in fact, they show up more intensely and reveal the more strained nature of the Si/Si3N4 interface. The PbNO observation confirms the PbO(PbNO) defect as a prototype dangling-bond defect with the unpaired hybrid pointing out of the Si substrate. Generally, the PbO(PbNO) defect appears to be a highly sensitive probe apt to reflect variations in the physico-chemical nature of the interface through its low-temperature ESR features.

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