Electroreflectance lineshapes in multilayered semiconductor structures: Influence of the linear electro-optic effect

phase shift as the polarization vector E of the probe beam is rotated by 90° from E 11̄0 to E 110 in the 001 plane. Through experiments and simulations, these resonances are shown to arise due to the linear electro-optic effect LEOE . The influence of LEOE at energies below the band gap becomes prominent mainly because of optical-interference induced enhancement of the Seraphin coefficients in a multilayered structure. Implications for the analysis of ER spectral lineshapes of multilayered semiconductor structures are highlighted.