Radiation resistant BJT-based temperature sensor for IoT sensor nodes

The possibility of using a BJT with linear transfer function as a radiation resistant temperature sensor for low power IoT sensor nodes is experimentally investigated. For this reason, the effect of neutron, electron and gamma radiation on the temperature dependence of the forward voltage on the emitter p-n-junction of the BJT in the low-current mode at two-terminal connection, when the base is shorted with the collector, has been investigated. The voltage decreases linearly from 0.8 to 0.4 V in the temperature range from −40 °С to +100 °С. The transfer function remains stable after irradiation by a neutron beam of up to a total fluence 1014 n/cm2. It has been experimentally established that the value of temperature sensitivity remains unchanged after the higher levels of radiation exposure for transistors with a narrow base region and with a lower doping level of base.