An Improved Small-Signal Equivalent Circuit for GaN High-Electron Mobility Transistors
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N. Jiang | F. Huang | X. Tang | Z. Wei | L. H. Zhang
[1] G. Dambrine,et al. A new method for determining the FET small-signal equivalent circuit , 1988 .
[2] P.M. White,et al. Improved equivalent circuit for determination of MESFET and HEMT parasitic capacitances from "Coldfet" measurements , 1993, IEEE Microwave and Guided Wave Letters.
[3] G. Kompa,et al. A new small-signal modeling approach applied to GaN devices , 2005, IEEE Transactions on Microwave Theory and Techniques.
[4] Nan Jiang,et al. Frequency-Independent Asymmetric Double-$pi $Equivalent Circuit for On-Chip Spiral Inductors: Physics-Based Modeling and Parameter Extraction , 2006, IEEE Journal of Solid-State Circuits.
[5] Fengyi Huang,et al. Characteristic-function approach to parameter extraction for asymmetric equivalent circuit of on-chip spiral inductors , 2006, IEEE Transactions on Microwave Theory and Techniques.
[6] Fengyi Huang,et al. Effect of Substrate Parasitic Inductance on Silicon-Based Transmission Lines and On-Chip Inductors , 2007, IEEE Electron Device Letters.
[7] Yu Zhiping,et al. A New Small-Signal Modeling and Extraction Method in AlGaN/GaN HEMTs , 2007 .
[8] H. Zirath,et al. A General Statistical Equivalent-Circuit-Based De-Embedding Procedure for High-Frequency Measurements , 2008, IEEE Transactions on Microwave Theory and Techniques.
[9] R. Brown,et al. Methodology for Small-Signal Model Extraction of AlGaN HEMTs , 2008, IEEE Transactions on Electron Devices.
[10] Qian Fan,et al. Small Signal Equivalent Circuit Modeling for AlGaN/GaN HFET: Hybrid Extraction Method for Determining Circuit Elements of AlGaN/GaN HFET , 2010, Proceedings of the IEEE.
[11] Xing Zhou,et al. A Comprehensive Compact Model for GaN HEMTs, Including Quasi-Steady-State and Transient Trap-Charge Effects , 2016, IEEE Transactions on Electron Devices.