GaAs switched-current techniques for front-end analogue signal processing applications

Ideas for the realization of switched current analog sampled data techniques in gallium arsenide (GaAs) MESFET technology are presented. Simulation results of a 1-GHz clock rate damped integrator and a biquadratic bandpass filter are given. Specific first generation memory cells discussed include the basic CMOS cell, the simple inverting GaAs MESFET cell, and the linear noninverting cell.<<ETX>>