论文信息 - A 622 Mb/s high-sensitivity monolithic InGaAs-InP pin-FET receiver OEIC employing a cascode preamplifier

A 622 Mb/s high-sensitivity monolithic InGaAs-InP pin-FET receiver OEIC employing a cascode preamplifier

A long-wavelength monolithically integrated receiver optoelectronic integrated circuit (OEIC) comprising a low input-capacitance cascode transimpedance preamplifier and a p-i-n photodiode has been demonstrated. The OEIC is fabricated using metal-organic vapor phase epitaxy (MOVPE) grown epilayers and the beryllium ion-implantation technique. The receiver exhibits a sensitivity of -34.7 dBm at 622 Mb/s for BER-10/sup -9/. Using a cascode preamplifier reduces an input capacitance to about one-half of that of an inverter type, which results in the use of a larger feedback resistance of 16 k Omega . The combination of low input capacitance and large feedback resistance reduces the noise current of the receiver and results in high sensitivity.<<ETX>>

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