True Yellow Light-Emitting Diodes as Phosphor for Tunable Color-Rendering Index Laser-Based White Light
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Tien Khee Ng | Boon S. Ooi | Chao Shen | Ahmed Y. Alyamani | Munir M. El-Desouki | Dalaver H. Anjum | Rami T. ElAfandy | Aditya Prabaswara | Yang Yang | Abdullah A. Alatawi | Davide Priante | Rami T. Elafandy | Bilal Janjua | Abdullah A. Alhamoud | B. Ooi | M. El-Desouki | D. Anjum | A. Alyamani | T. Ng | Chao Shen | B. Janjua | Aditya Prabaswara | Chao Zhao | A. Alatawi | A. Alhamoud | G. Consiglio | D. Priante | Chao Zhao | Yang Yang | Giuseppe Bernardo Consiglio | A. A. Alhamoud
[1] Walther Akemann,et al. A comprehensive concept of optogenetics. , 2012, Progress in Brain Research.
[2] Pallab Bhattacharya,et al. Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon. , 2014, Nano letters.
[3] Tien Khee Ng,et al. Large bandgap blueshifts in the InGaP/InAlGaP laser structure using novel strain-induced quantum well intermixing , 2016 .
[4] E. Fred Schubert,et al. Origin of efficiency droop in GaN-based light-emitting diodes , 2007 .
[5] P. Bhattacharya,et al. Catalyst-free InGaN/GaN nanowire light emitting diodes grown on (001) silicon by molecular beam epitaxy. , 2010, Nano letters.
[6] V. Consonni,et al. In situ analysis of strain relaxation during catalyst-free nucleation and growth of GaN nanowires , 2010, Nanotechnology.
[7] W. Lun,et al. Degradation mechanism beyond device self-heating in high power light-emitting diodes , 2011 .
[8] Andreas Wacker,et al. Heat flow in InAs/InP heterostructure nanowires , 2012, 1209.4940.
[9] Jong-In Shim,et al. Study of droop phenomena in InGaN-based blue and green light-emitting diodes by temperature-dependent electroluminescence , 2012 .
[10] J. Piprek. Efficiency droop in nitride‐based light‐emitting diodes , 2010 .
[11] Vladimir Karpov,et al. Solid state yellow and orange lasers for flow cytometry , 2008, Cytometry. Part A : the journal of the International Society for Analytical Cytology.
[12] Efrat Lifshitz,et al. Suppression of Auger-stimulated efficiency droop in nitride-based light emitting diodes , 2013 .
[13] Pallab Bhattacharya,et al. An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley-Read-Hall recombination. , 2015, Nanoscale.
[14] Pallab Bhattacharya,et al. III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon , 2015 .
[15] Shuji Nakamura,et al. 2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system. , 2015, Optics express.
[16] Yujie J. Ding,et al. Investigation of large Stark shifts in InGaN/GaN multiple quantum wells , 2013 .
[17] Umesh K. Mishra,et al. “S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells , 1998 .
[18] G A Botton,et al. p-Type modulation doped InGaN/GaN dot-in-a-wire white-light-emitting diodes monolithically grown on Si(111). , 2011, Nano letters.
[19] George T. Wang,et al. Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays. , 2011, Optics express.
[20] Yu-Chieh Chi,et al. Going beyond 4 Gbps data rate by employing RGB laser diodes for visible light communication. , 2015, Optics express.
[21] H. Renevier,et al. In situ study of self-assembled GaN nanowires nucleation on Si(111) by plasma-assisted molecular beam epitaxy , 2012 .
[22] Charles M. Lieber,et al. Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors. , 2006, Nano letters.
[23] T. Sadi,et al. On the correlation of the Auger generated hot electron emission and efficiency droop in III-N light-emitting diodes , 2014 .
[24] D. Jeon,et al. Yellow-emitting Sr3SiO5:Ce3+,Li+ phosphor for white-light-emitting diodes and yellow-light-emitting diodes , 2007 .
[25] R. Sauer,et al. Temperature dependence of the E2 and A1(LO) phonons in GaN and AlN , 1999 .
[26] Pallab Bhattacharya,et al. Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon , 2015 .
[27] Tien Khee Ng,et al. Perovskite Nanocrystals as a Color Converter for Visible Light Communication , 2016 .
[28] Jean Paul Freyssinier,et al. Solid-state lighting: failure analysis of white LEDs , 2004 .
[29] S. Denbaars,et al. Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting , 2013, Journal of Display Technology.
[30] Jonathan J. Wierer,et al. Four-color laser white illuminant demonstrating high color-rendering quality. , 2011, Optics express.
[31] Chao Shen,et al. Facile Formation of High-Quality InGaN/GaN Quantum-Disks-in-Nanowires on Bulk-Metal Substrates for High-Power Light-Emitters. , 2016, Nano letters.
[32] Martin Strassburg,et al. Molecular beam epitaxial growth and optical properties of red-emitting (λ = 650 nm) InGaN/GaN disks-in-nanowires on silicon , 2013 .
[33] Efrat Lifshitz,et al. The role of polarization fields in Auger-induced efficiency droop in nitride-based light-emitting diodes , 2013 .
[34] Rami T. Elafandy,et al. Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics. , 2016, Nano letters.
[35] Hadis Morkoç,et al. Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells , 2008 .
[36] Hadis Morkoç,et al. On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers , 2008 .
[37] Michael S. Shur,et al. Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells , 2002 .
[38] Nelson Tansu,et al. Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells. , 2011, Optics express.
[39] Steven M. George,et al. Thermal management of vertical gallium nitride nanowire arrays: Cooling design and tip temperature measurement , 2010, 2010 IEEE 23rd International Conference on Micro Electro Mechanical Systems (MEMS).